METHOD OF FORMING LDD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of forming an LDD of a semiconductor device. SOLUTION: A substrate having a polysilicon layer having a first region and a second region on itself is provided. The first region is exposed to form a patterned photoresist layer for covering the second region on the polysilicon layer. The photoresist layer for covering the second layer is provided with a center portion and an edge portion, and the center portion is made thicker than the edge portion. Next, ion implantation process is performed, using the photoresist layer as a mask for forming a source/drain in the first region of the polysilicon layer and the LDD in the second region below the edge portion of the photoresist layer. COPYRIGHT: (C)2005,JPO&NCIPI