| 摘要 |
There are provided: (1) a process for producing an InSbO4-containing transparent electroconductive film, which comprises the step of sputtering simultaneously: (i) a target (A) for sputtering, which comprises In, Sb and O, and whose atomic ratio of Sb/In is from 0.9 to 1.1, and (ii) a target (B) for sputtering, which comprises Sb, (2) a transparent eletroconductive film, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 0.8 to 1.5, and (3) a target for sputtering, which contains In, Sb and O, and whose atomic ratio of Sb/In is from 1.2 to 2.0.
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