发明名称 LAYER SYSTEM COMPRISING A SILICON LAYER AND A PASSIVATION LAYER, METHOD FOR PRODUCING A PASSIVATION LAYER ON A SILICON LAYER AND THE USE OF SAID SYSTEM AND METHOD
摘要 The invention relates to a layer system comprising a silicon layer (11), at least some sections of whose surface are provided with a passivation layer (17), the latter (17) consisting of a first, at least predominantly inorganic sub-layer (14) and a second sub-layer (15). The latter (15) is composed of an organic compound comprising silicon or a similar material. The second sub-layer (15) in particular takes the form of a self-assembled monolayer. The invention also relates to a method for producing a passivation layer (17) on a silicon layer (11), whereby a first inorganic sub-layer (14) is produced on said layer (11) and a second sub-layer (15), containing an organic compound containing silicon or consisting of said compound, is produced on at least some sections of the first sub-layer (14), whereby the sub-layers form the passivation layer (17). The inventive layer system or the inventive method are particularly suitable for producing cantilever structures in silicon.
申请公布号 WO2004018348(A3) 申请公布日期 2004.12.02
申请号 WO2003DE01437 申请日期 2003.05.06
申请人 ROBERT BOSCH GMBH;LAERMER, FRANZ;MUELLER, LUTZ;BERNHARD, WINFRIED 发明人 LAERMER, FRANZ;MUELLER, LUTZ;BERNHARD, WINFRIED
分类号 B81C1/00;H01L21/312;H01L21/316 主分类号 B81C1/00
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