发明名称 SEMICONDUCTOR MEMORY DEVICE WITH MEMORY FUNCTION PART, SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, PORTABLE ELECTRONIC APPARATUS, AND IC CARD
摘要 <p>PURPOSE: A semiconductor memory device, a semiconductor device, a manufacturing method thereof, a portable electronic apparatus, and an IC(Integrated Circuit) card are provided to prevent overerase, to improve charge retention time and to improve charge injection efficiency and write/erase speed by using a memory function part. CONSTITUTION: A semiconductor memory device includes a plurality of memory cells. Each memory cell includes a gate insulating layer(2) on a semiconductor substrate(1), a gate electrode(3) on the gate insulating layer, a channel forming region(19) under the gate electrode, a pair of source/drain region at both sides of the channel forming region, and a memory function part(30) at both sides of the gate electrode. The memory function part includes a charge retention part(31) and an anti-dissipation dielectric(32) for preventing the dissipation of stored charges. A first distance(T1) between the charge retention part and the substrate and a second distance(T2) between the charge retention part and the gate electrode are different from each other.</p>
申请公布号 KR20040101002(A) 申请公布日期 2004.12.02
申请号 KR20040035735 申请日期 2004.05.19
申请人 SHARP CORPORATION 发明人 IWATA, HIROSHI;OGURA, TAKAYUKI;SHIBATA, AKIHIDE
分类号 H01L27/115;(IPC1-7):H01L27/115 主分类号 H01L27/115
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