POWER MOSFET WITH REDUCED TERMINALS AND METHOD OF MANUFACTURING THE SAME

摘要

PURPOSE: A power MOSFET(Metal Oxide Semiconductor Field Effect Transistor) and a method of manufacturing the same are provided to reduce the size and connection resistance of each terminal and to simplify manufacturing processes. CONSTITUTION: A semiconductor substrate(11) includes a source electrode and a gate electrode on a first main surface(11A) and a drain electrode on a second main surface(11B). A source terminal layer(15) for contacting the source electrode is formed on the first main surface. A gate terminal layer(16) for contacting the gate electrode is formed on the first main surface. A drain terminal layer(17) for contacting the drain electrode is formed on the second main surface. The source and gate terminal layers are within the first main surface. The drain terminal layer is within the second main surface.