发明名称 MANUFACTURING METHOD OF MASK AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a mask capable of easily compressing mask data in a short time, and to provide a manufacturing method of semiconductor device employing the same. <P>SOLUTION: Complementary division patterns each being a different part of a pattern to be transferred in a region to be transferred are shared to a plurality of complementary masks to produce complementary data converted into image drawing data, and a hole is formed to a thin film of each complementary mask according to each complementary division pattern to form a mask. In the case of generating complementary data, a division object pattern 10 is complementarily divided, a pattern of the same shape as to divided patterns 10a to 10h, and at least one of non-division object patterns is searched from part selected from the divided patterns 10a to 10h and the non-division object patterns. The pattern data are deleted by leaving all data of the one pattern 10a and position data of the other patterns 10b to 10h as to sets of the patterns with the same shape to compress the data. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004342944(A) 申请公布日期 2004.12.02
申请号 JP20030139669 申请日期 2003.05.16
申请人 SONY CORP 发明人 ASHIDA ISAO;INOUE KAZUHARU
分类号 G03F1/20;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 主分类号 G03F1/20
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