| 摘要 |
In a semiconductor acceleration sensor (S1), above one side of a first silicon substrate (10) made of a semiconductor and serving as a fixed electrode (11), a moving electrode (20) made of a semiconductor and displaceable in the thickness direction of the first silicon substrate (10) is disposed apart from and facing the first silicon substrate (10). An applied acceleration is detected on the basis of capacitance changes between the moving electrode (20) and the face of the first silicon substrate (10) accompanying displacement of the moving electrode (20). A space and an electrically insulative insulating layer (13) having a relative permittivity larger than that of air are interposed between the moving electrode (20) and the face of the first silicon substrate (10), side by side in the direction in which the moving electrode (20) and the first silicon substrate (10) are apart.
|
