| 摘要 |
A method for processing an SOI substrate composed of a backing layer comprising a semiconductor substrate, an insulating layer laminated on the upper surface of the backing layer, a thin semiconductor film layer laminated on the upper surface of the insulating layer, and circuits formed on the face of the thin semiconductor film layer, the method including: a grinding step of grinding the backing layer so as to remain with a predetermined thickness; and an etching step of removing the backing layer, which has been formed to the predetermined thickness by the grinding step, by chemical etching to expose the insulating layer.
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