Semiconductor light-emitting device

摘要

A ZnSe light emitting device emitting light from an output face comprises an n-type ZnSe substrate including self-activated radiative recombination centers (SA), an active layer formed en above the n-type ZnSe substrate, and an Al layer provided the opposite side to the output face and serving to reflect light toward the output face. The emitted light is effectively used, the luminance is high, and the chromaticity of the white light emitting device can be easily adjusted.