| 摘要 |
A method of forming a photoresist layer free from a side-lobe is disclosed. A mask consists of a side-lobe region, a pattern region, and an intermediate region, wherein the side-lobe region is the corresponding area of the side-lobe produced in the photoresist layer, the pattern region is the corresponding area of the pattern formed in the photoresist layer, and the intermediate region is the area between the side-lobe region and the pattern region. The method characterized in that the transmittance of the side-lobe region is set lower than that of the intermediate region.
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