An over-voltage protection thyristor has reduced junction capacitance making it suitable for use in high bandwidth applications. The reduced capacitance is achieved through the introduction of a deep base region. The deep base region has a graded doping concentration which reduces with depth into the substrate. The thyristor is useful for protecting sensitive electrical equipment from transient surges.
申请公布号
WO2004105089(A2)
申请公布日期
2004.12.02
申请号
WO2004US15033
申请日期
2004.05.14
申请人
PAN JIT AMERICAS, INC.;TEMPLETON, GEORGE;WASHBURN, JAMES