SEMICONDUCTOR IC DEVICE WITH PHASE SHIFT MATERIAL LAYER SHARED WITH FIELD EFFECT TRANSISTORS

摘要

PURPOSE: A semiconductor IC(Integrated Circuit) device is provided to restrain the non-uniformity of electrical properties and the degradation of reliability by sharing a phase shift material layer with FETs(Field Effect Transistors) and forming a plate node electrode on the phase shift material layer. CONSTITUTION: A semiconductor IC device includes a plurality of memory cells. Each memory cell includes a resistive element(R) and FETs(QM) electrically connected with the resistive element on a semiconductor substrate(1). The resistive element is composed of a first electrode layer(21), a phase shift material layer(CG), and a second electrode layer(24). The resistive element is used for connecting electrically a common power source terminal to at least two FETs of the memory cell.