| 摘要 |
PROBLEM TO BE SOLVED: To provide a radiation detector, having a wide dynamic range and a high S/N ratio by using a matrix process substrate which has high resistance to heat. SOLUTION: Using an active matrix substrate 9, consisting of switching devices 3, charge storage capacities 2, in insulation layer, electrodes, gate lines 4, and a data line 5, a polycrystalline conversion layer 1 made of CdTe, CdZnTe, or the like which is expected to have high sensitivity with respect to light and radiations is formed at a film-forming temperature of 300 deg.C or higher. In the active matrix substrate 9, the switching devices 3 are polycrystalline silicon TFTs formed by a polysiclicon(Poly-Si) process. On one and the same surface of the active matrix substrate 9, a gate drive circuit 6 and a signal read circuit 7 are formed to scan and take outside a signal of each pixel.
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