| 发明名称 |
CMOS DEVICE WITH CHANNEL REGION IN SEMICONDUCTOR SUBSTRATE DOPED WITH LOW CONCENTRATION IMPURITIES AND SOURCE/DRAIN REGIONS WITHIN WELL REGION DOPED WITH HIGH CONCENTRATION IMPURITIES FOR IMPROVING BODY-EFFECT AND MANUFACTURING METHOD THEREOF |
| 摘要 |
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| 申请公布号 |
KR100460802(B1) |
申请公布日期 |
2004.12.01 |
| 申请号 |
KR19970032723 |
申请日期 |
1997.07.15 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, JIN HO |
| 分类号 |
H01L21/334;(IPC1-7):H01L21/334 |
主分类号 |
H01L21/334 |
| 代理机构 |
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代理人 |
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| 地址 |
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