| 摘要 |
A semiconductor laser diode and a manufacturing for fabricating the same are provided. The semiconductor laser diode includes a substrate (100), masks (114) that are formed at both sides of the substrate, a light generating layer that is formed on the substrate between the masks, current blocking layers (116) that are formed on the masks (114), respectively, and first and second electrodes (122, 120) that are formed on the bottom surface of the substrate (100) and on the top surface of the light generating layer, respectively. The optical generating layer and the current blocking layer are simultaneously formed through single growth, and the current blocking layer confines current and light in a lateral direction in the light generating layer. Thus, a semiconductor laser diode manufacturing process can be simplified, and threshold current for laser oscillation can be lowered. <IMAGE> |
