发明名称 Error detection, documentation, and correction in a flash memory device
摘要 A memory device has an error documentation memory array that is separate from the primary memory array. The error documentation memory array stores data relating to over-programmed bits in the primary array. When the over-programmed bits in the primary array are erased, the error documentation memory array is erased as well, deleting the documentation data relating to the over-programmed bits.
申请公布号 US2004243909(A1) 申请公布日期 2004.12.02
申请号 US20030431889 申请日期 2003.05.08
申请人 MICRON TECHNOLOGY, INC. 发明人 ROOHPARVAR FRANKIE F.
分类号 G11C16/34;G11C29/00;G11C29/52;(IPC1-7):G11C29/00 主分类号 G11C16/34
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