发明名称 |
Error detection, documentation, and correction in a flash memory device |
摘要 |
A memory device has an error documentation memory array that is separate from the primary memory array. The error documentation memory array stores data relating to over-programmed bits in the primary array. When the over-programmed bits in the primary array are erased, the error documentation memory array is erased as well, deleting the documentation data relating to the over-programmed bits.
|
申请公布号 |
US2004243909(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030431889 |
申请日期 |
2003.05.08 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
ROOHPARVAR FRANKIE F. |
分类号 |
G11C16/34;G11C29/00;G11C29/52;(IPC1-7):G11C29/00 |
主分类号 |
G11C16/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|