发明名称 |
Method of manufacturing a wafer |
摘要 |
The present invention relates to a method of manufacturing a wafer in which a heterogeneous material compound is detached at a pre-determined detachment area of the compound, and the compound is subject to a thermal treatment. It is the object of the present invention to provide an easy and effective method of detachment a heterogeneous material compound with a reduced risk of an undefined breaking of the compound. The object is solved by a method wherein the thermal treatment includes annealing the compound, where the annealing is stopped before a detachment of the compound, and an irradiation of the compound with photons in order to obtain a detachment of the compound at the pre-determined detachment area.
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申请公布号 |
US2004241960(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030716900 |
申请日期 |
2003.11.18 |
申请人 |
MAURICE THIBAUT;CAYREFOURCQ IAN;FOURNEL FRANCK |
发明人 |
MAURICE THIBAUT;CAYREFOURCQ IAN;FOURNEL FRANCK |
分类号 |
H01L21/02;H01L21/265;H01L21/762;H01L27/12;(IPC1-7):H01L21/30 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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