发明名称 PMOS electrostatic discharge (ESD) protection device
摘要 A PMOS ESD protection device is disclosed in which gate and substrate coupling techniques are implemented to afford protection during positive ESD events. A snapback leg in curves capable of being produced in accordance with one or more aspects of the present invention is removed, and a trigger voltage at which the device turns on is thereby reduced so as to be less than a second voltage corresponding to a second breakdown region.
申请公布号 US2004240128(A1) 申请公布日期 2004.12.02
申请号 US20030446369 申请日期 2003.05.28
申请人 BOSELLI GIANLUCA;REDDY VIJAY KUMAR;AMERASEKERA EKANAYAKE AJITH 发明人 BOSELLI GIANLUCA;REDDY VIJAY KUMAR;AMERASEKERA EKANAYAKE AJITH
分类号 H01L27/02;H01L29/78;H02H9/00;(IPC1-7):H02H9/00 主分类号 H01L27/02
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