发明名称 Method of making an anisotropic conductive polymer film on a semiconductor wafer
摘要 The invention relates to a method of manufacturing anisotropic conductive polymer film (23 and 24) on a semiconductor wafer (T) comprising, on one surface, a layer of passivation (12) in which at least one opening is made to allow access to a contact pad (11). The invention applies to the creating of components (chips, integrated circuits) with high-density interconnections.
申请公布号 US2004241932(A1) 申请公布日期 2004.12.02
申请号 US20040488939 申请日期 2004.03.16
申请人 SOURIAU JEAN-CHARLES;RENARD PIERRE;BRUNO JEAN 发明人 SOURIAU JEAN-CHARLES;RENARD PIERRE;BRUNO JEAN
分类号 H01L21/288;H01L21/60;H01L21/68;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/823 主分类号 H01L21/288
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