发明名称 |
Method of making an anisotropic conductive polymer film on a semiconductor wafer |
摘要 |
The invention relates to a method of manufacturing anisotropic conductive polymer film (23 and 24) on a semiconductor wafer (T) comprising, on one surface, a layer of passivation (12) in which at least one opening is made to allow access to a contact pad (11). The invention applies to the creating of components (chips, integrated circuits) with high-density interconnections.
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申请公布号 |
US2004241932(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20040488939 |
申请日期 |
2004.03.16 |
申请人 |
SOURIAU JEAN-CHARLES;RENARD PIERRE;BRUNO JEAN |
发明人 |
SOURIAU JEAN-CHARLES;RENARD PIERRE;BRUNO JEAN |
分类号 |
H01L21/288;H01L21/60;H01L21/68;H01L21/768;H01L23/485;H01L23/532;(IPC1-7):H01L21/823 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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