发明名称 Semiconductor optical integrated device
摘要 The present invention provides an optical semiconductor integrated device having an anti-reflection coating on the facet with a thinner thickness than those used in a conventional device. The device of the present invention comprises an light-generating region and a light-modulating region having a first facet for outputting light generated in the light-generating region and modulated in said light-modulating region. The first facet provides an anti-reflection coating including a first layer closest to the light-modulating region and a second layer. The first layer has a first refractive index and the second layer has a second refractive index greater than the first refractive index.
申请公布号 US2004238828(A1) 申请公布日期 2004.12.02
申请号 US20040797197 申请日期 2004.03.11
申请人 SUMITOMO ELECTRIC INDUSTRIES, LTD. 发明人 ITO MASASHI
分类号 C23C14/06;H01L27/15;H01S5/02;H01S5/026;H01S5/028;H01S5/042;H01S5/22;H01S5/227;(IPC1-7):H01L27/15;H01L33/00 主分类号 C23C14/06
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