| 摘要 |
The present invention concerns a storage device comprising a global probe array and a storage medium. The storage device further comprises an architectural structure system for addressing, erasing and enhanced internal communication methods, better suited for emerging applications and new costumer requirements. The invention refers to a high-density, high capacity, ultra-fast information storage and/or non-volatile memory apparatus. This invention will describe an apparatus, an architectural structure system and methods to create an information mass storage device, utilizing carbon nanotubes for mechanical, semiconductor and transmitter purposes, as well as a mechanical deformable storage medium on which information can be non-volatile stored in small deformations. Amenities include a density rate of at least 1 Tb/cm2, a capacity starting from 1 Terabyte (factory tuneable) and up, in preferred (small and light) embodiments. Other benefits include low-power consumption, shock resistance and low-cost manufacturing, utilizing conventional, inexpensive equipment. The "General Unified Storage" architectural system allows for improved internal communications, with access times and transfer rates of at least 3 Gb/s, Other methods include fast, proper and reliable erasing, addressing, higher reliability, high data security, and other advantages. The GUS structure enhances performance, functionality, reliability, flexibility to control and manage high capacity information storage devices to achieve superior internal communications, in addition to increased transfer times and access rates. |
