发明名称 Preparation method for protecting the back side of a wafer and back side protected wafer
摘要 <p>Preparation of wafer (1) comprises applying a cap layer (4) on or in the backside (3) surface of the wafer and creating functional structures (16) on or in front side (2) of the wafer during the fabrication process. An independent claim is included for wafer e.g. silicon on insulator or silicon on quartz type wafer comprises front and back sides, functional structures on front side of wafer surface and cap layer on or in the back side of surface of wafer.</p>
申请公布号 EP1482539(A1) 申请公布日期 2004.12.01
申请号 EP20030291253 申请日期 2003.05.26
申请人 S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES S.A. 发明人 MAURICE, THIBAUT;BLONDEAU, BERYL
分类号 H01L27/12;H01L21/02;H01L21/762;(IPC1-7):H01L21/314 主分类号 H01L27/12
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