发明名称 VERTICAL MOSFET
摘要 <p>The device has a silicon pillar with a high-resistivity region (3) and highly doped regions (4, 5). An insulator surrounds the resistivity region. A conductor is made of a material which permits a voltage applied to the conductor to control an electric current flowing between the doped regions. The conductor has a work function which brings the resistivity region to a perfect depletion condition during the flow of the current.</p>
申请公布号 EP1482562(A2) 申请公布日期 2004.12.01
申请号 EP20040253126 申请日期 2004.05.27
申请人 MASUOKA, FUJIO;SHARP KABUSHIKI KAISHA 发明人 MASUOKA, FUJIO;SAKURABA, HIROSHI;YAMAMOTO, YASUE
分类号 H01L21/336;H01L29/423;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L21/336 主分类号 H01L21/336
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