| 摘要 |
PROBLEM TO BE SOLVED: To prevent deterioration due to thermal stress as much as possible by relaxing stress applied to the joining sections of a heat-generating element and a heat sink. SOLUTION: A semiconductor device 11 is constituted in such a manner that a recessed section 13b in which the heat-generating element 12 is housed is formed to the heat sink 13, an underside electrode 16 is formed to the heat- generating element 12, a top-face peripheral electrode 19 is formed on the heat- generating element 12, a metallic annular member 15 placed on the heat sink 13 and the top-face peripheral electrode 19 on the heat-generating element 12 is shaped, and the recessed section 13b of the heat sink 13 and the underside electrode 16 on the heat-generating element 12 are soldered while the heat sink 13 and the top-face peripheral electrode 19 and the annular member 15 on the heat-generating element 12 are soldered. Since the semiconductor device is configured so that approximately the whole of the heat-generating element 12 is soldered to the heat sink 13 and the annular member 15 in this case, the restraint of the heat-generating element 12 is strengthened largely. |
