发明名称 |
Field effect transistor and method of fabrication |
摘要 |
The present invention is a novel field effect transistor having a channel region formed from a narrow bandgap semiconductor film formed on an insulating substrate. A gate dielectric layer is formed on the narrow bandgap semiconductor film. A gate electrode is then formed on the gate dielectric. A pair of source/drain regions formed from a wide bandgap semiconductor film or a metal is formed on opposite sides of the gate electrode and adjacent to the low bandgap semiconductor film.
|
申请公布号 |
US6825506(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20020306640 |
申请日期 |
2002.11.27 |
申请人 |
INTEL CORPORATION |
发明人 |
CHAU ROBERT S.;BARLAGE DOULGAS;JIN BEEN-YIH |
分类号 |
H01L21/336;H01L29/45;H01L29/49;H01L29/78;H01L29/786;(IPC1-7):H01L31/072 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|