发明名称 |
Magnetic random access memory with reduced parasitic currents |
摘要 |
Systems and methods for storing data are provided. A representative system for storing data includes a magnetic random access memory (MRAM) device having a plurality of memory cells. Each memory cell includes a magnetic tunnel junction and a non-magnetic tunnel junction that are connected in series. The magnetic tunnel junction stores a bit value corresponding to a logic high (1) or a logic low (0). The non-magnetic tunnel junction provides little resistance when the memory cell is being read, and a substantially high resistance when the memory cell is not being read. As a result, a negligible level of parasitic current leaks through memory cells that are not being read.
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申请公布号 |
US6826077(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20020146201 |
申请日期 |
2002.05.15 |
申请人 |
HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P. |
发明人 |
SMITH KENNETH K.;VANBROCKLIN ANDREW;FRICKE PETER J. |
分类号 |
G11C11/15;G11C11/16;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/15 |
代理机构 |
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