发明名称 |
PLASMA APPARATUS AND METHOD FOR PROCESSING A SUBSTRATE |
摘要 |
Embodiments of the invention generally provide a method of forming a nitride gate dielectric layer. The method includes generating a nitrogen-containing plasma in a processing chamber via introduction of a nitrogen-containing processing gas into the processing chamber and the application of an ionizing energy to the processing gas, and pulsing the ionizing energy to maintain a mean temperature of electrons in the nitrogen-containing plasma of less than about 0.7 eV. |
申请公布号 |
WO03107382(A3) |
申请公布日期 |
2004.09.23 |
申请号 |
WO2003US18784 |
申请日期 |
2003.06.12 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
KRAUS, PHILIP, ALLAN;CHUA, TAI, CHENG;HOLLAND, JOHN;CRUSE, JAMES, P. |
分类号 |
H05H1/46;H01L21/314;H01L21/318;H01L21/768 |
主分类号 |
H05H1/46 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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