发明名称 |
Semiconductor device on a combination bulk silicon and silicon-on-insulator (SOI) substrate |
摘要 |
A semiconductor device includes a combination substrate having a bulk silicon region, and a silicon-on-insulator (SOI) region. The SOI region includes a crystallized silicon layer formed by annealing amorphous silicon and having isolation trenches formed therein so as to remove defective regions, and isolation oxides formed in the isolation trenches.
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申请公布号 |
US6825534(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20000748256 |
申请日期 |
2000.12.27 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN HOWARD H.;HSU LOUIS L.;WANG LI-KONG |
分类号 |
H01L21/20;H01L21/762;H01L21/84;(IPC1-7):H01L27/01;H01L27/108 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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