发明名称 Process semiconductor porous surface obtaining
摘要 The invention relates to the semiconductor technology, in particular to process es for obtaining porous surfaces of the semiconductors. Summary of the invention consists in that onto the semiconductor surface it is deposited a mask, selectively covering it, and it is carried out the electrochemical pickling. Novelty of the invention consists in that the mask is made of photoresist.
申请公布号 MD2610(F1) 申请公布日期 2004.11.30
申请号 MD20040000097 申请日期 2004.04.28
申请人 TIGINYANU ION 发明人 MONAIKO EDUARD;TIGINYANU ION;POPA VYACHESLAV;VOLCHYUK OLESYA
分类号 B82B3/00;H01L29/30;H01L33/00;(IPC1-7):B82B3/00 主分类号 B82B3/00
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