发明名称 Methods of fabricating buried digit lines
摘要 A method for electrically linking the contacts of a semiconductor device to their corresponding digit lines includes disposing a quantity of mask material into a trench through which the contact is exposed. The mask also abuts a connect region of a conductive element of a corresponding conductive line and, therefore, protrudes somewhat over a surface of the semiconductor device. A layer of insulative material is formed over the semiconductor device with the mask exposed therethrough. The mask is then removed, leaving open cavities, including the trench and a strap region continuous with both the trench and a connect region of the corresponding conductive line. Conductive material is introduced into each open cavity to define conductive plugs or studs and conductive straps that are electrically isolated from one another. Semiconductor devices including features that have been fabricated in accordance with the method are also within the scope of the present invention.
申请公布号 US6825109(B2) 申请公布日期 2004.11.30
申请号 US20030425130 申请日期 2003.04.28
申请人 MICRON TECHNOLOGY, INC. 发明人 LOWREY TYLER A.
分类号 H01L21/60;H01L21/768;H01L21/8239;H01L21/8242;H01L27/105;H01L27/108;(IPC1-7):H01L21/476 主分类号 H01L21/60
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