发明名称 |
Structure and method for eliminating time dependent dielectric breakdown failure of low-k material |
摘要 |
An interconnect structure for a semiconductor device includes a metallization line formed within a low-k dielectric material, the metallization line being surrounded on bottom and side surfaces thereof by a liner material. An embedded dielectric cap is formed over a top surface of the metallization line, wherein the embedded dielectric cap has a sufficient thickness so as to separate a top surface of the liner material from a hardmask layer formed over the low-k dielectric material.
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申请公布号 |
US6825561(B1) |
申请公布日期 |
2004.11.30 |
申请号 |
US20030250273 |
申请日期 |
2003.06.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
AGARWALA BIRENDRA N.;NGUYEN DU B.;RATHORE HAZARA S. |
分类号 |
H01L21/768;H01L23/532;(IPC1-7):H01L23/48;H01L23/52 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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