发明名称 |
Lateral power MOSFET for high switching speeds |
摘要 |
A lateral power metal-oxide-semiconductor field effect transistor (MOSFET) having a gate structure in which the insulated gate is coupled to the gate electrode through contacts at a plurality of locations. The source electrode includes first and second segments. The first segment is interposed between the drain electrode and the gate electrode and acts as a field plate.
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申请公布号 |
US6825536(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20030340040 |
申请日期 |
2003.01.10 |
申请人 |
POWER INTEGRATIONS, INC. |
发明人 |
DISNEY DONALD RAY;GRABOWSKI WAYNE BRYAN |
分类号 |
H01L29/40;H01L29/417;H01L29/423;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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