发明名称 |
Semiconductor integrated circuit device and method of manufacturing the same |
摘要 |
In order to eliminate the difference in ESD resistance caused by polarities of excessive voltages applied to an external terminal and enhance ESD resistance of a semiconductor integrated circuit device to both the positive and negative overvoltages, a protection element having a thyristor structure, for protecting an internal circuit from the positive overvoltage and a protection element made up of a diode D1 for protecting the internal circuit from the negative overvoltage are provided between the external terminal and a ground potential.
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申请公布号 |
US6825504(B2) |
申请公布日期 |
2004.11.30 |
申请号 |
US20020277152 |
申请日期 |
2002.10.22 |
申请人 |
HITACHI, LTD.;HITACHI ULSI SYSTEMS CO., LTD. |
发明人 |
ISHIZUKA HIROYASU;OKUYAMA KOUSUKE;KUBOTA KATSUHIKO |
分类号 |
H01L27/02;H01L29/72;H01L29/74;(IPC1-7):H01L29/72 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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