| 摘要 |
PURPOSE: A ferroelectric memory device having a multi reference voltage generator is provided to obtain a required reference voltage even when a fabrication process of a device is completed. CONSTITUTION: A normal cell array unit(100) has normal cells arranged in a matrix at cross points of a plurality of word lines(WLn) and a plurality of positive bit lines(BL). A fuse/reference cell array unit(300) has reference cells(314,324,334) arranged in a matrix at cross points of three reference word lines(RWL) and a plurality of negative bit lines(/BL), and each reference cell is connected to the negative bit line through fuses(322) of the corresponding reference cell. And a sense amplifier array unit(200) has sense amplifiers to amplify a data voltage level of a selected normal cell induced in the positive bit line and a reference voltage level of a selected reference cell induced in the negative bit line.
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