发明名称 Non-volatile memory cell e.g. electrically EPROM, analog parameter controlling method for integrated circuit, involves determining value of intrinsic analog parameter of system, when magnitude of system attains threshold
摘要 The method involves positioning a multi-level system of a non-volatile memory cell in operating conditions to which the magnitude of the system follows a determined threshold value. The operating conditions of the system are evaluated in a manner to allow the magnitude to attain the threshold value. A value of an intrinsic analog parameter of the system is determined, when the magnitude attains the threshold value. Independent claims are also included for the following: (a) an integrated circuit having a programmable memory (b) a control apparatus cooperating with a device of controlling a non-volatile memory cell.
申请公布号 FR2855308(A1) 申请公布日期 2004.11.26
申请号 FR20030006184 申请日期 2003.05.22
申请人 STMICROELECTRONICS SA;LABORATOIRE MATERIAUX ET MICROELECTRONIQUE DE PROVENCE L2MP 发明人 NEE DIDIER;AZIZA HASSEN;PORTAL MICHEL
分类号 G11C29/00 主分类号 G11C29/00
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