发明名称 |
Non-volatile memory cell e.g. electrically EPROM, analog parameter controlling method for integrated circuit, involves determining value of intrinsic analog parameter of system, when magnitude of system attains threshold |
摘要 |
The method involves positioning a multi-level system of a non-volatile memory cell in operating conditions to which the magnitude of the system follows a determined threshold value. The operating conditions of the system are evaluated in a manner to allow the magnitude to attain the threshold value. A value of an intrinsic analog parameter of the system is determined, when the magnitude attains the threshold value. Independent claims are also included for the following: (a) an integrated circuit having a programmable memory (b) a control apparatus cooperating with a device of controlling a non-volatile memory cell. |
申请公布号 |
FR2855308(A1) |
申请公布日期 |
2004.11.26 |
申请号 |
FR20030006184 |
申请日期 |
2003.05.22 |
申请人 |
STMICROELECTRONICS SA;LABORATOIRE MATERIAUX ET MICROELECTRONIQUE DE PROVENCE L2MP |
发明人 |
NEE DIDIER;AZIZA HASSEN;PORTAL MICHEL |
分类号 |
G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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