| 摘要 |
PURPOSE: A semiconductor device is provided to control reflection and reduction of an input signal by decreasing a capacitance value of a PN junction as compared with a conventional technique in which an N-type impurity diffusion layer is directly formed on a P-type semiconductor substrate. CONSTITUTION: An input terminal receives an input signal. A terminating resistance device avoids reflection of the input signal, including a semiconductor substrate(2) of the first conductivity type, the first impurity diffusion region, an impurity diffusion layer and a pair of electrodes. The first impurity diffusion region is formed on the semiconductor substrate, having the second conductivity type different from the first conductivity type. The impurity diffusion layer is formed on the first impurity diffusion region, having the second conductivity type whose impurity density is higher than that of the first impurity diffusion region. The pair of electrodes are formed on the impurity diffusion layer, separated from each other. One of the pair of electrodes is connected to the input terminal and the other of the pair of electrodes is connected to a line of the first power potential.
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