发明名称 SEMICONDUCTOR DEVICE WITH CAPACITOR AND FABRICATING METHOD THEREOF TO IMPROVE RELIABILITY OF DIELECTRIC LAYER OF CAPACITOR
摘要 PURPOSE: A semiconductor device with a capacitor is provided to improve reliability of a dielectric layer of a capacitor by reducing a possibility that a leakage current occurs in the dielectric layer. CONSTITUTION: A semiconductor substrate(1) is prepared. A lower electrode(9) of a capacitor has a vertical part formed to extend in an almost vertical direction to the main surface of the semiconductor substrate. The surface of the vertical part is covered with a dielectric layer(10) of the capacitor. In the dielectric layer of the capacitor, a layer thickness(t1) on the upper part of the vertical part is greater than that(t2) on the side surface of the vertical part.
申请公布号 KR20040099087(A) 申请公布日期 2004.11.26
申请号 KR20030080160 申请日期 2003.11.13
申请人 RENESAS TECHNOLOGY CORP. 发明人 WAKAO KAZUTOSHI;TSUCHIMOTO JUNICHI;INABA YUTAKA;AIHARA KAZUHIRO
分类号 H01L21/8242;H01L21/02;H01L21/8234;H01L27/108;(IPC1-7):H01L27/108 主分类号 H01L21/8242
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