发明名称 |
SEMICONDUCTOR DEVICE WITH CAPACITOR AND FABRICATING METHOD THEREOF TO IMPROVE RELIABILITY OF DIELECTRIC LAYER OF CAPACITOR |
摘要 |
PURPOSE: A semiconductor device with a capacitor is provided to improve reliability of a dielectric layer of a capacitor by reducing a possibility that a leakage current occurs in the dielectric layer. CONSTITUTION: A semiconductor substrate(1) is prepared. A lower electrode(9) of a capacitor has a vertical part formed to extend in an almost vertical direction to the main surface of the semiconductor substrate. The surface of the vertical part is covered with a dielectric layer(10) of the capacitor. In the dielectric layer of the capacitor, a layer thickness(t1) on the upper part of the vertical part is greater than that(t2) on the side surface of the vertical part.
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申请公布号 |
KR20040099087(A) |
申请公布日期 |
2004.11.26 |
申请号 |
KR20030080160 |
申请日期 |
2003.11.13 |
申请人 |
RENESAS TECHNOLOGY CORP. |
发明人 |
WAKAO KAZUTOSHI;TSUCHIMOTO JUNICHI;INABA YUTAKA;AIHARA KAZUHIRO |
分类号 |
H01L21/8242;H01L21/02;H01L21/8234;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L21/8242 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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