发明名称 LIQUID CRYSTAL DEVICE, ACTIVE MATRIX SUBSTRATE, DISPLAY DEVICE, AND ELECTRONIC EQUIPMENT HAVING THE SAME, PARTICULARLY IN CONCERNED WITH SUPPRESSING LEAKAGE CURRENT OF THIN FILM TRANSISTOR AT EXTREMELY LOW LEVEL AND EASILY COPING WITH EXTRA-HIGH DEFINITION OF PIXEL
摘要 PURPOSE: A liquid crystal device, an active matrix substrate, a display device, and an electronic equipment having the same are provided to reduce a leakage current of a thin film transistor to an extremely low level and realize a liquid crystal display of extra-high definition. CONSTITUTION: A plurality of scanning lines and a plurality of data lines(6a) are formed on an active matrix substrate, crossing each other. A plurality of thin film transistors(30) are formed at cross parts of the data lines and the scanning lines. The active matrix substrate has a pixel electrode(9) connected with the corresponding thin film transistor. Another substrate is arranged facing the active matrix substrate. A liquid crystal layer(50) is interposed between the two substrates. The thin film transistor is formed of a P type transistor including a semiconductor layer(42), a plurality of gate electrodes(32,33,34) crossing the semiconductor layer, and an LDD(Lightly Doped Drain) part having P-type lightly doped regions at one of channel areas of the semiconductor layer. Shield film(15) are formed at both sides of the thin film transistor.
申请公布号 KR20040099160(A) 申请公布日期 2004.11.26
申请号 KR20040034353 申请日期 2004.05.14
申请人 SEIKO EPSON CORPORATION 发明人 KOIDE SHIN;ITO TOMOYUKI;KOSHIHARA TAKESHI;KITAGAWA ATSUSHI
分类号 G02F1/1335;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L29/786;(IPC1-7):G02F1/136 主分类号 G02F1/1335
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