发明名称 PLASMA PROCESS APPARATUS AND CONTROL METHOD THEREOF TO AVOID ABNORMAL DISCHARGE IN INITIAL STAGE OF PLASMA PROCESS AND GUARANTEE UNIFORMITY OF PLASMA DURING PLASMA PROCESS
摘要 <p>PURPOSE: A plasma process apparatus is provided to avoid an abnormal electric discharge in an initial stage of a plasma process and guarantee uniformity of plasma during the plasma process by applying an overshoot voltage of the second electrode before a plasma treatment is performed on an object to be processed. CONSTITUTION: The first electrode is disposed in a process chamber in which plasma is generated to process an object to be processed. The second electrode is disposed in a position confronting the first electrode in the process chamber. The first power source for supplying the first power to the first electrode belongs to the first power meter. The second power source for supplying the second power to the second electrode belongs to the second power meter. A control unit controls the first power meter and the second power meter. The control unit controls both or either of the first and second power meters so that a prior treatment voltage higher than a voltage applied to the second electrode during a plasma process performed on the object to be processed is applied to the second electrode for a predetermined interval before the plasma process is performed on the object to be processed in the process chamber.</p>
申请公布号 KR20040099148(A) 申请公布日期 2004.11.26
申请号 KR20040034142 申请日期 2004.05.14
申请人 TOKYO ELECTRON LIMITED 发明人 KOSHIISHI AKIRA;KITANO MASATOSHI
分类号 B01J19/08;B01J19/12;C23F4/00;H01J37/32;H01L21/00;H01L21/205;H01L21/3065;H05H1/46;(IPC1-7):H01L21/306 主分类号 B01J19/08
代理机构 代理人
主权项
地址