| 摘要 |
PROBLEM TO BE SOLVED: To obtain a relief method of a semiconductor storage device wherein the stable yield of the semiconductor storage device is obtained while securing reliability by performing failure relief by a redundancy circuit. SOLUTION: (1) An oxide film on a fuse is etched and adjusted to a prescribed film thickness. (2) A wafer test is performed, a memory relief pattern is determined, and sending is performed to a bump process. After performing (3) surface cleaning for acceptance and (4) bump plating pattern formation, (5) the fuse for relief is cut by tracing the memory relief pattern by laser trimming, and the relief of a memory is performed. Continuously, (6) packaging is performed in an assembly process. (7) A final test is performed in a final test process, and an excellent article is obtained. COPYRIGHT: (C)2005,JPO&NCIPI
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