发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To write the initial data of all memory cells in a short period of time, to permit the initialization at any time after the supply of electric power, and to perform the initialization without deteriorating the operational margin. SOLUTION: A plurality of word lines 1a-4a are connected to respective cells of a memory cell circuit B2-1, each is provided with a word signal control circuit B1-1 for supplying a word signal prepared from an initialization signal Init. Using the plurality of initialization signals Init, the word signal control circuit B1-1 may be divided, and the memory cell circuit B2-1 may be written, collectively or for each memory cell block. As a result, the data of respective cells are initialized within a short period of time of 1-2 cycles, with the initialization signal Init. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004335009(A) 申请公布日期 2004.11.25
申请号 JP20030131489 申请日期 2003.05.09
申请人 NEC MICRO SYSTEMS LTD 发明人 FUKUDA AI;OKIZAKI SANETSUGU
分类号 G11C11/41;(IPC1-7):G11C11/41 主分类号 G11C11/41
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