| 摘要 |
A multiple wavelength semiconductor laser is disclosed. The multiple wavelength semiconductor laser has a first edge emitting type resonator structure and a second edge emitting type resonator structure disposed on a common substrate through a separation region. The first edge emitting type resonator structure has an oscillation wavelength of 650 nm. The second edge emitting type resonator structure has an oscillation wavelength of 780 nm. A low reflection film that is a three-layer dielectric film composed of a first Al2O3 film of 60 nm, a TiO2 film of 55 nm, and a second Al2O3 film of 140 nm, where the refractive index of the TiO2 film is smaller than the refractive index of the first Al2O3 film and the refractive index of the second Al2O3 film.
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