ROM component with memory cells containing nanowires of electric conductivity, or with PN-junction, with latter comprising different current flow directions

摘要

For energising of memory cells are provided word lines (2,WL) and bit lines (1,BL) and at each intersection of word and bit line is fitted memory cell. At least portion of memory cells are each formed electric conductive connection (11-14) between each allocated word and bit line. Part of connections (13,14) are conductive in both directions, while other parts (11,12) contain PN-junctions (diodes), each with one of two possible current pass directions between respective word and bit lines. Energising takes place by applying alternative voltages of opposite polarity between word and bit lines.