发明名称 |
GROUP III-V COMPOUND CRYSTAL AND ITS PRODUCING METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a simple and an inexpensive method for producing a group III-V compound crystal by which the good group III-V compound crystal without cracks is obtained even if various substrates are used. <P>SOLUTION: The method for producing the group III-V compound crystal is comprised of a step to deposit a metal film 2 on a substrate 1, a step to heat-treat the metal film 2 at an atmosphere where a patterning compound exists and a step to grow the group III-V compound crystal 4 on the heat-treated metal film 2. Another method has a step to grow a group III-V compound buffer film on the above heat-treated metal film and a step to grow the group III-V compound crystal on the group III-V compound buffer film after the heat-treating step. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004331453(A) |
申请公布日期 |
2004.11.25 |
申请号 |
JP20030129829 |
申请日期 |
2003.05.08 |
申请人 |
SUMITOMO ELECTRIC IND LTD |
发明人 |
NAKAHATA SEIJI;UEMATSU KOJI;HIROTA TATSU |
分类号 |
C30B29/40;C30B25/02;C30B25/18;C30B29/38;H01L21/20;H01L21/205;H01L33/12;H01L33/32;H01L33/34;H01S5/323 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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