发明名称 GROUP III-V COMPOUND CRYSTAL AND ITS PRODUCING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a simple and an inexpensive method for producing a group III-V compound crystal by which the good group III-V compound crystal without cracks is obtained even if various substrates are used. <P>SOLUTION: The method for producing the group III-V compound crystal is comprised of a step to deposit a metal film 2 on a substrate 1, a step to heat-treat the metal film 2 at an atmosphere where a patterning compound exists and a step to grow the group III-V compound crystal 4 on the heat-treated metal film 2. Another method has a step to grow a group III-V compound buffer film on the above heat-treated metal film and a step to grow the group III-V compound crystal on the group III-V compound buffer film after the heat-treating step. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004331453(A) 申请公布日期 2004.11.25
申请号 JP20030129829 申请日期 2003.05.08
申请人 SUMITOMO ELECTRIC IND LTD 发明人 NAKAHATA SEIJI;UEMATSU KOJI;HIROTA TATSU
分类号 C30B29/40;C30B25/02;C30B25/18;C30B29/38;H01L21/20;H01L21/205;H01L33/12;H01L33/32;H01L33/34;H01S5/323 主分类号 C30B29/40
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