发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To enable manufacturing of a wafer level package while not increasing its manufacturing cost, utilizing a prior art apparatus for manufacturing a resin substrate. <P>SOLUTION: A semiconductor device manufacturing method comprising the steps of giving electroless plating to electrode terminals 12 to coat the surfaces of the electrode terminals 12 with a protective film for protection of the electrode terminals from a laser beam; grinding the rear surface side of a semiconductor wafer to make the thickness of the wafer 10 small before or after formation of the protective film; coating an electrode terminal formation surface of the thinned semiconductor wafer and the rear surface thereof entirely with resins 16 and 18 to form a laminate 20; and directing a laser beam from an external side of the laminate toward the electrode terminal formation surface of the wafer to apply the beam onto the terminal formation surface and to form via holes 22, through which the protective film is exposed to its bottom surface, and then filling the via holes with electrolessly-plated material to form conductive parts. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004335915(A) 申请公布日期 2004.11.25
申请号 JP20030132652 申请日期 2003.05.12
申请人 SHINKO ELECTRIC IND CO LTD 发明人 TANMACHI HARUO
分类号 H01L23/52;H01L21/3205;H01L21/60;H01L23/12;H01L23/31;(IPC1-7):H01L23/12;H01L21/320 主分类号 H01L23/52
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