METHOD FOR DETECTING CONCENTRATION OF Cu ON SILICON SUBSTRATE

摘要

PROBLEM TO BE SOLVED: To grasp contamination of a process by evaluating Cu conveniently and quantitatively without dissolving a silicon substrate totally. SOLUTION: The method for detecting the concentration of Cu existing on a silicon substrate by heating it at a temperature of 600°C or below is improved such that the substrate contains boron at a concentration of 3×1018atoms/cm3or above, the substrate is heated at a temperature of 300-350°C for 1-12 hours and then Cu existing on the surface and rear surface of the heated substrate is analyzed quantitatively. COPYRIGHT: (C)2005,JPO&NCIPI