| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing equipment in which heat-treatment under low-oxygen conditions can be performed in a short time and further can shorten total time required for substrate processing. SOLUTION: In a treatment chamber for heat-treating the substrate, heights of a proximity sheet 251 and a proximity pin 252 are set to 0.2mm and are doubled compared with those of the aging treatment station (DAC), the cooling treatment station (CPL), and the low-temperature heat-treatment station (LHP), which were mentioned above. Thereby, when replacing N<SB>2</SB>gas, no air remains in a gap between a wafer W and a hot plate 232, and time required for making desired low-oxygen atmosphere in an enclosed space between an elevating cover 238 and the hot plate 232, which is the treatment chamber, can be shortened. Therefore, heat-treatment under low-oxygen conditions can be performed in a short time. COPYRIGHT: (C)2005,JPO&NCIPI
|
