| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state imaging device capable of enlarging a dynamic range by increasing a manageable saturation charge capacity without enlarging the width of a charge transfer passage. SOLUTION: In the solid state imaging device where a plurality of light receiving parts 21 are arranged in an array on the surface of a semiconductor substrate and charge stored at each light receiving part 21 is read out, each light receiving part 21 is provided with a first signal charge storing section 31 for storing signal charge dependent on the amount of incident light, and a second signal charge storing section 32 for capturing and storing a part of excess charges when charge stored in the first signal charge storing section 31 exceeds the amount of the saturation charge thereof. By such an arrangement, the amount of the saturation charge at one pixel (light receiving part) can be increased without enlarging the width of a charge transfer passage. COPYRIGHT: (C)2005,JPO&NCIPI
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