DIFFUSION WAFER AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a diffusion wafer wherein raw material can be reduced and the high level of dislocation density on the surface of a non-diffusion layer and the thickness of the non-diffusion layer within a standard are attained. SOLUTION: The diffusion wafer has double-layer structure having a diffusion layer 1 where high-density impurity is diffused on one surface of a silicon wafer and having the non-diffusion layer where impurity is not diffused on the other surface. The diffusion wafer has dislocation density distribution where in dislocation density is gradually reduced from the surface of the non-diffusion layer to the vicinity of a prescribed surface layer NS, and gradually increased from the vicinity of the prescribed surface layer to an interface B with the diffusion layer. The inclination of the dislocation density from the surface of the non-diffusion layer to the vicinity of the prescribed surface layer is designated to be larger than that from the vicinity of the prescribed surface layer to the interface with the diffusion layer. COPYRIGHT: (C)2005,JPO&NCIPI