| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can reduce halogens trapped between an interface between a CVD film of Si and a substrate and in the CVD film by discharging halide gases or molecules comprising halogens which remain inside a reaction chamber. SOLUTION: The substrate is conveyed into the reaction chamber 3 and heated up to a treating temperature. During the period after conveyance of the substrate and before rise of the substrate temperature to the treating temperature, a gas comprising hydrogen atoms is supplied from an SiH<SB>4</SB>base gas supply pipe 16. Subsequently, a source gas comprising halogens and silicon atoms is supplied into the reaction chamber 3 through a material supply pipe 13 for treatment of the substrate, followed by conveying the substrate out from the reaction chamber 3. Alternatively, the substrate is conveyed into the reaction chamber 3, followed by treatment thereof by supplying into the reaction chamber 3 the source gas comprising halogens and silicon atoms through the material supply pipe 13, and after conveying the substrate out from the reaction chamber 3, the gas comprising hydrogen atoms is supplied into the reaction chamber 3 through the SiH<SB>4</SB>base gas supply pipe 16, in a state where no substrate is present in the reaction chamber 3. COPYRIGHT: (C)2005,JPO&NCIPI
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